Delenummer : | RN1910FE(T5L,F,T) |
---|---|
Produsent / Merke : | Toshiba Semiconductor and Storage |
Beskrivelse : | TRANS 2NPN PREBIAS 0.1W ES6 |
RoHs Status : | Blyfri / RoHS-kompatibel |
Antall tilgjengelige | 342084 pcs |
Dataark | RN1910FE(T5L,F,T).pdf |
Spenning - Samler Emitter Breakdown (Max) | 50V |
Vce Metning (Maks) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Leverandør Enhetspakke | ES6 |
Serie | - |
Motstand - Emitterbase (R2) | - |
Motstand - Base (R1) | 4.7 kOhms |
Strøm - Maks | 100mW |
emballasje | Cut Tape (CT) |
Pakke / tilfelle | SOT-563, SOT-666 |
Andre navn | RN1910FE(T5LFT)CT |
Monteringstype | Surface Mount |
Vannfølsomhetsnivå (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frekvens - Overgang | 250MHz |
Detaljert beskrivelse | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Gjeldende - Samler Cutoff (Maks) | 100nA (ICBO) |
Nåværende - Samler (Ic) (Maks) | 100mA |