| Delenummer : | RN2910FE,LF(CB |
|---|---|
| Produsent / Merke : | Toshiba Semiconductor and Storage |
| Beskrivelse : | TRANS 2PNP PREBIAS 0.1W ES6 |
| RoHs Status : | Blyfri / RoHS-kompatibel |
| Antall tilgjengelige | 1459077 pcs |
| Dataark | RN2910FE,LF(CB.pdf |
| Spenning - Samler Emitter Breakdown (Max) | 50V |
| Vce Metning (Maks) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Leverandør Enhetspakke | ES6 |
| Serie | - |
| Motstand - Emitterbase (R2) | - |
| Motstand - Base (R1) | 4.7 kOhms |
| Strøm - Maks | 100mW |
| emballasje | Tape & Reel (TR) |
| Pakke / tilfelle | SOT-563, SOT-666 |
| Andre navn | RN2910FE(T5L,F,T) RN2910FE(T5LFT)TR RN2910FE(T5LFT)TR-ND RN2910FE,LF(CT RN2910FELF(CBTR RN2910FELF(CTTR RN2910FELF(CTTR-ND |
| Monteringstype | Surface Mount |
| Vannfølsomhetsnivå (MSL) | 1 (Unlimited) |
| Produsentens Standard Lead Time | 16 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frekvens - Overgang | 200MHz |
| Detaljert beskrivelse | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Gjeldende - Samler Cutoff (Maks) | 100nA (ICBO) |
| Nåværende - Samler (Ic) (Maks) | 100mA |
Toshiba Semiconductor and Storage
